Sunday, November 19, 2006
A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region
Abstract
Analytical model for buried p-layer 4H-SiC MESFET in saturation region is proposed. This model provides static characteristics and small signal parameter and has been extended to predict the effect of B.P.Layer on capacitance–voltage characteristics and cut-off frequency. In the saturation region, the depletion region formed in the active region due to B.P.Layer is no longer independent of gate voltage so the effect of gate voltage on the second depletion region has also been considered for accurate prediction of charge. The results so obtained are compared with simulated data to prove the validity of the model.
Keywords: Buried p-layer; 4H-SiC MESFET; Saturation region; Wide band gap semiconductor; Substrate current; Trap effects
Analytical model for buried p-layer 4H-SiC MESFET in saturation region is proposed. This model provides static characteristics and small signal parameter and has been extended to predict the effect of B.P.Layer on capacitance–voltage characteristics and cut-off frequency. In the saturation region, the depletion region formed in the active region due to B.P.Layer is no longer independent of gate voltage so the effect of gate voltage on the second depletion region has also been considered for accurate prediction of charge. The results so obtained are compared with simulated data to prove the validity of the model.
Keywords: Buried p-layer; 4H-SiC MESFET; Saturation region; Wide band gap semiconductor; Substrate current; Trap effects
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